Director and Scientific Member at Max-Planck Institute for Solid State Research, Germany.
Experimental semiconductor physics, Low dimensional electron systems, Nanoelectronics, Molecular quantum structures.
Klaus von Klitzing discovered precise steps in the behavior of electrons under certain applications in semiconductor electronics, a field of importance in computer science and other present-day technology. The discovery permits more precise measurement of electrical resistance and more accurate testing of theories about electronic movements within atoms. His experiments were performed in a magnetic field up to 20 tesla at the High Magnetic Field Laboratory in Grenoble, France. This magnetic field is roughly 400,000 times stronger than that of the earth's surface magnetism.
1985 Nobel Laureate in Physics for the discovery of the quantized Hall effect.
Designation of the fundamental constant h/e2 as von Klitzing constant.
Direct evidence of tunneling between edge states across a gate-induced potential barrier, A.J.Peck, S.J.Bending, J.Weis, R.J.Haug, K.von Klitzing and K.Ploog, Phys. Rev. B 51, 4711 (1995).
Composite fermions in magnetic focusing and commensurability experiments.
J. H. Smet, D. Weiss, K. von Klitzing, R. Fleischmann, R. Ketzmerick, T. Geisel, W. Wegscheider, P.T. Coleridge, Z.W. Wasilewski, and G. Weimann.
Physica B, 249:15, 1998.
L.V. Kulik, I.V. Kukushkin, V.E. Kirpichev, K. v. Klitzing, and K. Eberl
Magnetic Field-Induced Dispersion Anisotropy of Intersubband Excitations in Asymmetric Quasi-Two-Dimensional Electron System
Phys. Rev. B 61(3), 1712-1715 (January 2000).